Protector for over tensions of industrial and home networks

ABSTRACT

There are multiple distortions and anomalies during the operation of the electric energy sources. The anomaly that with more incidence produces destruction is the over voltage, when the voltage of the feeder source goes over the maximum level supported by the isolation system of one equipment or device. A device is provided to protect industrial and domiciliary installations against over voltages. This device is built with passive elements, i.e., resistors, diodes, Zener Diodes and by controllable interrupters by the use of gate currents. This device is connected to the network as protection. When a voltage level higher than the pre-selected and adjusted level appears in the network, the protection produce a controlled short-circuit in the network that is cleared by a thermo magnetic interrupter that is part of the circuit to be protected, achieving in this way the over voltage clearing. The protection result is very effective, i.e. protects against over voltage to adjusted levels to a level closer to the maximum operation level of the devices that are connected to the network.

There are multiple distortions and anomalies in the operation of the electric energy sources. The anomaly that with more incidence produce destruction is the over voltage, when the voltage of the feeder source goes over the maximum isolation level of one equipment or device.

Depending on the system or component of the isolation system, a failure could be produced as a consequence of a disruptive voltage (Very fast) of high energy, however the equipment will overcome in a better way a moderate voltage for a longer time an vice versa.

-   -   The disruptive over voltage normally will produce the damage and         perforation of some component of the isolation system.     -   The moderate over voltage of long duration will normally produce         the destruction of some component of the isolation systems         because of the progressive overheating.

As follows could be found some phenomena's between others that could cause over voltage:

-   -   Atmospheric discharges: Are consequence of the accumulated         static electric energy in the air and discharged in the vicinity         of the transmission lines, substations or electric loads.         Normally produces over voltages of high energy and short         duration.     -   Transients because of load connection and disconnection: Every         time that happen to be changes in the load, some events are         produced that could be described as an oscillation in the         voltage feeder that are mitigated during the time. Normally         these phenomena's produces moderate over voltages of short         duration depending on the network seize in relation to the         variation of the load     -   Failures in the topology of the distribution networks of medium         and low voltage: Due to inadequate connections, line cuts, etc a         change could be produced in the topology of the network that         could end in an over voltage in one of the feeder lines.

Methods from the Prior Art used to Mitigate Overvoltages

Nowadays, several protections against over voltages are utilized, like surge arresters, over voltage relays, varistors, filters and snubbers networks for over voltage. The surge arresters are devices that produces an over voltage discharge. The varistors are resistive elements with one special characteristic, presenting a high impedance when the element is operated at low voltages and a low impedance when this element is operated at higher voltages. Over Voltage Snubber networks are circuits to be installed in different locations in the circuits for protecting the circuit against of over voltages of short duration.

Eficacy of the Protection Methods

The protection must be designed considering the following basic elements:

-   -   The maximum admissible voltage of the elements of the circuit to         be protected.     -   The operation voltage of the circuit.

The efficacy of the mentioned protection methods are adequate against over voltages of very high magnitude. i.e the protection operates at any voltage level higher than the nominal voltage of the loads and for this reason are insufficient (surge arresters, varistors and snubber networks). The equipments, electric components involved in the network operation should be designed to resist very high over voltages (several times the normal operation voltage) and as consequence a very high value of the equipments due to the following reasons:

-   -   Equipment for very specific use and high resistance.     -   The Design of the circuits with components that must resist         several times de maximum nominal voltage of the circuit or         complex circuit designed with the use of semiconductor elements,         each one with it their own protection     -   The protection using conventional techniques is expensive or not         possible sometimes due to technical restrictions due to the fact         they need a high accumulation of energy and also very high         energy dissipation.

The protection using Varistors in not efficient, a Varistor of 700V is typically fired starting at 1100V

The Invention

The subject matter of the present invention is a device designed to protect industrial and domiciliary installations against over voltages and also capable to be coordinated with the other protections of the system. The device is designed with the following elements:

-   -   Snubber Elements: Like the Lak reactor, Rak resistor, Cak         capacitor and Vak Varistor.     -   Semiconductor principal elements Sx: Is the element in which the         current flows when the protection is operated.     -   Element of detection and turn on: It is composed by resistors,         diodes and Zener Diodes. The protection operation level is         determinate by the voltage level of the Zener diode.

The device of the present invention is capable of clearing over voltages by means of the following procedure.

-   -   Initially and when the operation voltage is lower than the         maximum operation voltage, the main principal semiconductors Sx         are turned off. i.e the current in all the elements of the         protection device is cero with exception in the Cak Capacitor     -   In the moment that the over voltage appears, i.e when the         current goes over a pre-determinate and adjusted limit by the         incorporation of Zener Diodes, a current begins to flow (lg) by         the detection and turn-on element (Rg, Dg, Z1, . . . , Zn) and         by the turning on the terminal of the semiconductor Sx.     -   In the moment that the current reaches the turn-on limit of the         semiconductor, this component is turn-on and the current is cut         off lg.     -   The current that flows by Lak and by Rak, starts to flow from         the main junction of the main semiconductor Sx. The current is         controlled by Lak and Rak. Lak is used to avoid the destruction         of the main semiconductor Sx because of the increasing amount of         the current (Semiconductor protection Di/dt)     -   The over voltage is cleared

To control the over current produced by the operation of the protection, there is two possibilities:

-   -   If the source is an alternated voltage source, once the over         voltage disappear, the failure will be cleared in the instant         that the current reaches the 0 level. However, if the thermo         magnetic protection of the voltage circuit operates, the circuit         will be disconnected. In general, this protection should be         associated and coordinated to a thermo magnetic interrupter.     -   If the source correspond to a DC voltage source, the current         will not reach the cero value. It is then required an over         current protection that could be a thermo magnetic interrupter         or and interruption of the source

The advantages presented by the invention has the following characteristics:

-   -   Robust protection, due to the fact that operates under all         critic conditions to protect the circuit. The circuit is         designed with power electronic components not requiring         integrated circuits and no power sources that could be         interrupted.     -   Invisible protection due to the Fact that under normal operation         it does not produce circuit alteration     -   Very Efficacy protection due to the Fact that operates at levels         slightly higher than the maximum nominal voltage of the circuit         and for this reason components could be specified to resist a         little amount over this voltage.     -   Economic protection due to the Fact that it is very efficacy and         also because operates only during non programmed events,         clearing failures in a very quick way therefore it's current         capacity is very low. 

1. A passive and autonomous power electronic circuit, for ultra fast protection against over voltages from the main source, for electric, electronic and semiconductor devices, for industrial or domiciliary applications, CHARACTERIZED as a device or a passive electronic element arrange without an active source, that detect a bigger voltage than the normal voltage of the source, AC or DC, and redirect the current to an alternative low impedance circuit. This element's arrange is defined as unidirectional (FIG. 1.a and FIG. 2), or bi-directional (FIG. 1.b y FIG. 3).
 2. A circuit, according claim 1, CHARACTERIZED because the arrange of the zener diodes Z1 to Zn could be composed by one or several elements of different zener voltages.
 3. A circuit, according claim 1, CHARACTERIZED because the arrange of the zener diodes Z1 to Zn could be not necessary and/or be enough with the Rg resistance to control the gate current.
 4. A circuit, according claim 1, CHARACTERIZED because the Rg resistance could be not necessary, or be enough by the own semiconductor resistance connection.
 5. A circuit, according claim 1, CHARACTERIZED because the gate protective diode Zgk could be zener diode or zener diode arrange with zener voltage minor than the maximum supported by the gate.
 6. A circuit, according claim 1, CHARACTERIZED because the gate protective diode Zgk could be a conventional diode or a conventional diode arrange with direct voltage, minor than the maximum supported by the gate.
 7. A circuit, according claim 1, CHARACTERIZED because the gate protective diode Zgk could be not necessary because of voltage wave form conditions.
 8. A circuit, according claim 1, CHARACTERIZED because the gate block diode Dg could be conventional diode or conventional diode arrange with reverse voltage, bigger than the maximum supported by the principal semiconductor element(s) Sx.
 9. A circuit, according claim 1, CHARACTERIZED because the gate block diode Dg could be not necessary because of the voltage wave form conditions.
 10. A circuit, according claim 1, CHARACTERIZED because the reactor Lak could be not necessary or not required if it is enough with the own inductance of the connection conductor.
 11. A circuit, according claim 1, CHARACTERIZED because the capacitor Cak could be not necessary or be enough with the capacitance of the capacitors connected to the load in parallel to the protection.
 12. A circuit, according claim 1, CHARACTERIZED because the resistance Rak could be not necessary or not required if it is enough with the own inductance and/or resistance of the connection conductor.
 13. A circuit, according claim 1, CHARACTERIZED because the varistor Vak could be not necessary or not required if it is enough with the protective elements in parallel to the protection.
 14. A circuit, according claim 1, CHARACTERIZED because the gate semiconductor could be thyristor (SCR), GTO, TRIAC or any semiconductor with the property of being fired by gate current and turned off by circuit natural conditions.
 15. A circuit, according claim 1, CHARACTERIZED because the gate semiconductor could be bipolar transistor BJT, MOSFET, IGBT and others of any kind with the property of being fired by gate or base current and turned off by absence of gate or base current (when the over voltage is cleared).
 16. A circuit, according claim 1, CHARACTERIZED because in place of a semiconductor could be used any gate, base or grid (gaseous discharge device) controlled discharge device.
 17. A circuit, according claim 1, CHARACTERIZED because is possible one or several units in series connection to support voltage.
 18. A circuit, according claim 1, CHARACTERIZED because is possible one or several units in parallel connection to support the current.
 19. A circuit, according claim 1, CHARACTERIZED because is possible to used as unidirectional or bi-directional protection for a single phase voltage or current source network, when it is installed between phase and the neutral conductor.
 20. A circuit, according claim 1, CHARACTERIZED because is possible to be used as unidirectional or bidirectional protection for a single phase voltage or current source network, when it is installed between phase and the ground conductor.
 21. A circuit, according claim 1, CHARACTERIZED because is possible to be used as unidirectional or bidirectional protection for a three phase voltage or current source network, when it is installed between phases conductors.
 22. A circuit, according claim 1, CHARACTERIZED because is possible to be used as unidirectional or bidirectional protection for a three phase voltage or current source network, when it is installed between phase conductor and neutral conductor.
 23. A circuit, according claim 1, CHARACTERIZED because is possible to be used as unidirectional or bidirectional protection for a three phase voltage or current source network, when it is installed between phase conductors and ground conductor.
 24. A circuit, according claim 1, CHARACTERIZED because is possible to be used it as unidirectional or bidirectional protection for a continuous or unidirectional voltage source network. 